STP16N65M5_B-chips components （HK）Co, Ltd.

STP16N65M5

Manufacturer's number STP16N65M5
Manufacturer ST
Detailed MOSFET N-CH 650V 12A TO-220
Detailed Description N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-220-3

Documents & Media

Datasheets	STx16N65M5
Product Training Modules	5th Generation High Voltage Mosfet Technology STMicroelectronics ST MOSFETs
Other Related Documents	STP16N65M5 View All Specifications
Simulation Models	STP16N65M5 Spice Model
HTML Datasheet	STx16N65M5
EDA / CAD Models	Download from Ultra Librarian
Online Catalog	N-Channel MOSFET (Metal Oxide)

Product Attributes

TYPE	DESCRIPTION	SELECT ALL
Categories	Discrete Semiconductor Products
Categories	Transistors - FETs, MOSFETs - Single
Manufacturer	STMicroelectronics
Series	MDmesh™ V
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	299mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	1250pF @ 100V
FET Feature	-
Power Dissipation (Max)	90W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Part Number	STP16N

Environmental & Export Classifications

RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)

Product inquiry

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