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FQB27P06TM

Documents & Media
Datasheets FQB27P06
 
Environmental Information Material Declaration FQB27P06TM
 
PCN Design/Specification Description Chg 01/Apr/2016
Logo 17/Aug/2017
 
PCN Assembly/Origin Assembly Change 24/Sep/2019
 
PCN Packaging Tape and Box/Reel Barcode Update 07/Aug/2014
TO263 31/Aug/2016
 
Online Catalog P-Channel MOSFET (Metal Oxide) 
Product Attributes
TYPE DESCRIPTION SELECT ALL 
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series QFET®
Packaging Tape & Reel (TR) 
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
FET Feature -
Power Dissipation (Max) 3.75W (Ta), 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
 
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Resources
Standard Package  800
Other Names FQB27P06TM-ND 
FQB27P06TMTR 


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